Title :
Novel MIS Ge-Si quantum-dot infrared photodetectors
Author :
Hsu, B.-C. ; Lin, C.-H. ; Kuo, P.-S. ; Chang, S.T. ; Chen, P.S. ; Liu, C.W. ; Lu, J.-H. ; Kuan, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The metal-insulator-semiconductor (MIS) Ge-Si quantum-dot infrared photodetectors (QDIPs) are successfully demonstrated. Using oxynitride as gate dielectric instead of oxide, the operating temperature reaches 140 and 200 K for 3-10 and 2-3 μm detection, respectively. From the photoluminescence spectrum, the quantum-dot structures are responsible for the 2-3 μm response with high operation temperature, and the wetting layer structures may be responsible for the 3-10 μm response. This novel MIS Ge-Si QDIP can increase the functionality of Si chip such as noncontact temperature sensing and is compatible with ultra-large scale integration technology.
Keywords :
Ge-Si alloys; MIS devices; ULSI; infrared detectors; photodetectors; photoluminescence; semiconductor quantum dots; temperature sensors; 140 K; 2 to 3 micron; 200 K; 3 to 10 micron; GeSi; MIS Ge-Si QDIP; MIS Ge-Si quantum-dot infrared photodetectors; Si chip functionality; metal-insulator-semiconductor; noncontact temperature sensing; operation temperature; oxynitride gate dielectric; photoluminescence spectrum; quantum-dot structures; ultra-large scale integration technology; wetting layer structures; Charge carrier lifetime; Dark current; Dielectrics; Indium gallium arsenide; Infrared detectors; Photodetectors; Photoluminescence; Quantum dots; Space technology; Temperature sensors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.831969
