Title :
Low-temperature power device: a new poly-Si high-voltage LDMOS with excimer laser crystallization
Author :
Gang-Long Chang ; Ming-Jang Lin ; Liaw, C.W. ; Huang-Chung Cheng
Author_Institution :
Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A new low-temperature polysilicon high-voltage LDMOS (LTPS HVLDMOS) using excimer laser crystallization has been proposed for the first time. However, in order to enhance LTPS HVLDMOS characteristics, there are two starting points: 1) integrate the thin-film technology with the power device, and 2) clarify the requirement of excimer laser treatment for low-temperature power devices. As the result, the on/off current ratio after laser treatment is improved over 106 times than that before laser treatment at L/sub drift/ = 15 μm and V/sub ds/ = 25 V. The LTPS HVLDMOS after laser treatment also demonstrates the better tradeoff between the specific on resistance and breakdown voltage against the previous high-voltage thin-film transistors (HVTFTs) by solid-phase crystallization - such as semi-insulating (SI), metal field-plated, and offset-drain HVTFTs.
Keywords :
crystallisation; electric resistance; excimer lasers; low-temperature techniques; power MOSFET; power integrated circuits; power semiconductor devices; semiconductor device breakdown; semiconductor device models; thin film devices; thin film transistors; 25 V; LTPS HVLDMOS; Si; breakdown voltage; excimer laser crystallization; excimer laser treatment; high-voltage thin-film transistors; lateral double diffused MOS; low-temperature polycrystalline silicon; low-temperature power device; metal field-plated HVTFT; offset-drain HVTFT; on/off current ratio; polySi high-voltage LDMOS; resistance; semiinsulating HVTFT; solid-phase crystallization; thin-film technology; Chemical vapor deposition; Crystallization; Doping; Liquid crystal displays; Plasma displays; Plasma temperature; Power lasers; Silicon; Solid lasers; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.831590
