Title :
A Novel Depletion-IMOS (DIMOS) Device With Improved Reliability and Reduced Operating Voltage
Author :
Onal, Caner ; Woo, Raymond ; Koh, H. -Y Serene ; Griffin, Peter B. ; Plummer, James D.
Author_Institution :
Electr. Eng. Dept., Stanford Univ., Stanford, CA
Abstract :
We experimentally demonstrate a novel depletion-IMOS (DIMOS) device with a 12.1-mV/dec subthreshold slope and 5-decade ON/OFF ratio, employing a depletion mode of operation instead of inversion. DIMOS structure improves reliability by reducing hot carrier injection and features 40% lower breakdown voltages with higher ON currents compared to conventional IMOS.
Keywords :
MOSFET; circuit reliability; DIMOS device; MOSFET; ON-OFF ratio; breakdown voltage; carrier injection; novel depletion-IMOS device; operating voltage; Depletion mode; I-MOS; IMOS; depletion type; impact ionization; subthreshold slope (SS); subthreshold swing;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2008029
