Electroabsorption and Electrorefraction in an InAs Quantum-Dot Waveguide Modulator

Author

Malins, D.B. ; Gomez-Iglesias, A. ; Rafailov, E.U. ; Sibbett, W. ; Miller, A.

Author_Institution

St. Andrews Univ., Saint Andrews

Volume

19

Issue

15

fYear

2007

Firstpage

1118

Lastpage

1120

Abstract

Optical transmission measurements are reported in the 1.3-mum region in an InAs quantum-dot (QD) waveguide modulator using a supercontinuum generator. A quantum-confined Stark shift of 15 nm was demonstrated in a five-layer QD stack with a field of 270 KV/cm. The electrically induced change in absorption has been measured and the change in refractive index (up to 0.001) has been estimated via the Kramers-Kronig relations. This highlights the potential of such a device as an electroabsorption or electrooptic phase modulator at telecommunication wavelengths.

Keywords

III-V semiconductors; Kramers-Kronig relations; electro-optical modulation; electroabsorption; indium compounds; optical multilayers; optical testing; phase modulation; quantum confined Stark effect; refractive index; semiconductor quantum dots; supercontinuum generation; InAs - Interface; Kramers-Kronig relations; electroabsorption; electrooptic phase modulator; electrorefraction; optical transmission measurements; quantum-confined Stark shift; quantum-dot waveguide modulator; refractive index; supercontinuum generator; wavelength 1.3 mum; Absorption; Electric variables measurement; Nonlinear optics; Optical modulation; Optical refraction; Optical variables control; Optical waveguides; Quantum dots; Supercontinuum generation; Wavelength measurement; Electroabsorption; electrorefraction; semiconductor quantum dots (QDs); supercontinuum;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.901093

Filename

4265644