DocumentCode :
1043270
Title :
Development of an electrothermal simulation tool for integrated circuits: Application to a two-transistor circuit
Author :
Mohammadi, F.A. ; ATTAR, SARA
Author_Institution :
Dept. of Electr. & Comput. Eng., Ryerson Univ., Toronto, ON
Volume :
33
Issue :
42433
fYear :
2008
Firstpage :
191
Lastpage :
200
Abstract :
In this paper a methodology for performing electrothermal analyses on integrated circuits is introduced. Using the relaxation method, standard electrical and thermal simulators, which are often used in the design process, are coupled through an efficient interface program. The simulator is capable of performing steady-state and transient analysis at device and chip levels. A variable-time-step technique has been implemented to reduce the computational time for a given set of computational resources. The simulator has been validated on different structures such as the bipolar junction transistor to predict the temperature distribution and the device performance in an amplifier circuit and an integrated current-mirror circuit. The simulation results are compared to experimental results to verify the performance of the electrothermal simulator and the accuracy of the thermal model. Simulation results demonstrate that the approach is suitable to model the thermal effects of integrated circuits in a more time-efficient, accurate and user-friendly fashion.
Keywords :
amplifiers; bipolar transistors; circuit simulation; integrated circuit design; thermal analysis; transient analysis; amplifier circuit; bipolar junction transistor; chip level; computational time; electrothermal simulation tool; integrated current-mirror circuit; relaxation method; steady-state analysis; temperature distribution; thermal effect; thermal simulator; transient analysis; two-transistor circuit; variable-time-step technique; Application specific integrated circuits; Circuit analysis; Circuit simulation; Computational modeling; Coupling circuits; Electrothermal effects; Integrated circuit modeling; Performance analysis; Process design; Relaxation methods; IC thermal simulation; chip temperature gradient; electrothermal analysis; microelectronics; semiconductor devices modelling; thermal effects;
fLanguage :
English
Journal_Title :
Electrical and Computer Engineering, Canadian Journal of
Publisher :
ieee
ISSN :
0840-8688
Type :
jour
DOI :
10.1109/CJECE.2008.4721625
Filename :
4721625
Link To Document :
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