Continuous analytic I-V model for surrounding-gate MOSFETs

Author

Jiménez, D. ; Iñíguez, B. ; Suñé, J. ; Marsal, L.F. ; Pallarès, J. ; Roig, J. ; Flores, D.

Author_Institution

Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain

Volume

25

Issue

8

fYear

2004

Firstpage

571

Lastpage

573

Abstract

We present a continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs. It is based on the exact solution of the Poisson´s equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. It is valid for all the operation regions (linear, saturation, subthreshold) and traces the transition between them without fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. We have demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages.

Keywords

MOSFET; Poisson equation; semiconductor device models; semiconductor doping; 3D numerical simulations; I-V characteristics; Poisson equation; SGT MOSFETs compact model kernel; charge-sheet approximation; continuous analytic I-V model; current continuity equation; current-voltage model; cylindrical undoped surrounding gate; drain voltages; gate voltages; inversion charge distribution; lightly doped surrounding gate; silicon film; surrounding-gate MOSFET; transition tracing; CMOS technology; Electrons; Kernel; MOSFETs; Numerical simulation; Poisson equations; Semiconductor device modeling; Semiconductor films; Silicon; Voltage; MOSFET; Modeling; surrounding gate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.831902

Filename

1317029