A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gate

A replacement gate process employing a HfN dummy gate and sub-1-nm equivalent oxide thickness (EOT) HfO₂ gate dielectric is demonstrated. The excellent thermal stability of the HfN-HfO₂ gate stack enables its use in high temperature CMOS processes. The replacement of HfN with other metal gate materials with work functions adequate for n- and pMOS is facilitated by a high etch selectivity of HfN with respect to HfO₂, without any degradation to the EOT, gate leakage, or time-dependent dielectric breakdown characteristics of HfO₂. By replacing the HfN dummy gate with Ta and Ni in nMOS and pMOS devices, respectively, a work function difference of ∼0.8 eV between nMOS and pMOS gate electrodes is achieved. This process could be applicable to sub-50-nm CMOS technology employing ultrathin HfO₂ gate dielectric.