DocumentCode :
1043306
Title :
Pulse investigation of switching delays in VO2coplanar devices
Author :
Adam, Georges B. ; Duchene, Jacques C.
Author_Institution :
Centre d´´Etudes Nucléaires de Grenoble, Grenoble, France
Volume :
19
Issue :
6
fYear :
1972
fDate :
6/1/1972 12:00:00 AM
Firstpage :
820
Lastpage :
825
Abstract :
The purpose of this paper is to show that switching delay times of a few microseconds can be obtained in VO2coplanar threshold devices. The investigation of the influence of different parameters (pulse height and pulse width, pulse rate, ambient temperature) on the delay time and the recovery time underlines the features of the thermal switching phenomenon: decrease in the delay time when voltage and temperature increase, increase in the recovery time with overvoltage, and decrease in the maximum repetition rate with overvoltage. The experimental results are similar to those published on other threshold devices.
Keywords :
Conductivity; Delay effects; Electrodes; Heating; Semiconductor thin films; Space vector pulse width modulation; Temperature dependence; Thin film devices; Threshold voltage; Voltage control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17499
Filename :
1476970
Link To Document :
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