• DocumentCode
    1043324
  • Title

    Trapped plasma oscillations in unipolar semiconductor structures

  • Author

    Dworsky, Lawrence N. ; Harrison, Richard I.

  • Author_Institution
    New York University, Bronx, N. Y.
  • Volume
    19
  • Issue
    6
  • fYear
    1972
  • fDate
    6/1/1972 12:00:00 AM
  • Firstpage
    836
  • Lastpage
    838
  • Abstract
    Based on the results of a large-signal computer simulation, a trapped plasma mode of oscillation is described in an n+-n-n+ silicon structure. The mechanism is similar to TRAPATT in many ways, but relies upon space-charge injection of majority carriers rather than a depletion region for the necessary initial electric field profile. A necessary design criteria of N_{d}L < 10^{12} cm-2is established.
  • Keywords
    Dielectric breakdown; Electron mobility; Electron traps; Hysteresis; Oxidation; Plasmas; Semiconductor films; Silicon compounds; Snow; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1972.17501
  • Filename
    1476972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1043324