DocumentCode :
1043324
Title :
Trapped plasma oscillations in unipolar semiconductor structures
Author :
Dworsky, Lawrence N. ; Harrison, Richard I.
Author_Institution :
New York University, Bronx, N. Y.
Volume :
19
Issue :
6
fYear :
1972
fDate :
6/1/1972 12:00:00 AM
Firstpage :
836
Lastpage :
838
Abstract :
Based on the results of a large-signal computer simulation, a trapped plasma mode of oscillation is described in an n+-n-n+ silicon structure. The mechanism is similar to TRAPATT in many ways, but relies upon space-charge injection of majority carriers rather than a depletion region for the necessary initial electric field profile. A necessary design criteria of 
cm-2is established.
cm-2is established.Keywords :
Dielectric breakdown; Electron mobility; Electron traps; Hysteresis; Oxidation; Plasmas; Semiconductor films; Silicon compounds; Snow; Tunneling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17501
Filename :
1476972
Link To Document :
