DocumentCode
1043485
Title
Investigations on the effect of drift-field-dependent mobility on MOST characteristics—Part I: QB constant
Author
Mansour, I. M R ; Talkhan, E.A. ; Barboor, A.I.
Author_Institution
U.A.R. Atomic Energy Research Laboratories, Cairo, U.A.R.
Volume
19
Issue
8
fYear
1972
fDate
8/1/1972 12:00:00 AM
Firstpage
899
Lastpage
907
Abstract
A detailed analysis of MOST
static characteristics is given, showing clearly the effect of mobility variation along the channel. In this analysis, the widely used formulas for the mobility field dependence are considered and compared. The analysis follows two approaches. In the first approach, a critical field εc , is defined beyond which the mobility is no longer constant. Since the drift field increases towards the drain, the
plane is divided into three regions by two loci representing the two extreme cases of whether the drift field at the drain or its value at the source is just equal to the critical value. The derived equations are plotted for different values of a parameter
that gives flexibility on the way the mobility is expected to vary along the channel. In the second approach, the mobility formula is that proposed by Trofimenkoff and Caughey, and is valid for any value of the drift field. It gives one current equation with the restriction that it is only valid up to a certain drain voltage below pinchoff. The results in both cases show clear tendency of current saturation before pinchoff, as well as substantial overall reduction in the current levels and mutual conductance. This trend is more pronounced in short channel MOST\´s.
static characteristics is given, showing clearly the effect of mobility variation along the channel. In this analysis, the widely used formulas for the mobility field dependence are considered and compared. The analysis follows two approaches. In the first approach, a critical field ε
plane is divided into three regions by two loci representing the two extreme cases of whether the drift field at the drain or its value at the source is just equal to the critical value. The derived equations are plotted for different values of a parameter
that gives flexibility on the way the mobility is expected to vary along the channel. In the second approach, the mobility formula is that proposed by Trofimenkoff and Caughey, and is valid for any value of the drift field. It gives one current equation with the restriction that it is only valid up to a certain drain voltage below pinchoff. The results in both cases show clear tendency of current saturation before pinchoff, as well as substantial overall reduction in the current levels and mutual conductance. This trend is more pronounced in short channel MOST\´s.Keywords
Conducting materials; Conductivity; Conductors; Differential equations; Fabrication; Geometry; MOSFET circuits; Production facilities; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17518
Filename
1476989
Link To Document