• DocumentCode
    104360
  • Title

    Mechanisms of the Asymmetric Light Output Enhancements in (a) -Plane GaN Light-Emitting Diodes With Photonic Crystals

  • Author

    Hsiang-Wei Li ; Yu-Feng Yin ; Chen-Yu Chang ; Chen-Hung Tsai ; Yen-Hsiang Hsu ; Da-Wei Lin ; Yuh-Renn Wu ; Hao-Chung Kuo ; Jian Jang Huang

  • Author_Institution
    Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    50
  • Issue
    12
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    951
  • Lastpage
    956
  • Abstract
    The unique properties of nonpolar GaN light-emitting diodes (LEDs) have the advantages of generating polarized light emission. The employment of asymmetric 2-D photonic crystals (PhCs) can further enhance the light polarization ratio. In addition, it was generally recognized that the Purcell effect can increase the internal quantum efficiency of the LEDs with PhCs. In this paper, we study the properties of optical modes from different crystal planes. The Purcell effect is analyzed based on the PhCs and material crystal orientations. With different transition probability of the polarized photons in valence bands, the corresponding Purcell effect enhancement on the quantum efficiency varies.
  • Keywords
    III-V semiconductors; crystal orientation; gallium compounds; light emitting diodes; light polarisation; photonic crystals; valence bands; wide band gap semiconductors; GaN; LED; Purcell effect; a-plane GaN light-emitting diodes; asymmetric 2D photonic crystals; asymmetric light output enhancements; crystal planes; internal quantum efficiency; light polarization ratio; material crystal orientation; nonpolar GaN light-emitting diodes; optical modes; polarized light emission; polarized photons; transition probability; valence bands; Electric fields; Gallium nitride; Light emitting diodes; Optical polarization; Photonic crystals; Spontaneous emission; Light-emitting diodes; Non-polar GaN; Photonic crystal; Purcell effect; non-polar GaN; photonic crystal; purcell effect;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2014.2362552
  • Filename
    6920002