• DocumentCode
    1043626
  • Title

    Fast neutron tolerance of GaAs JFET´s operating in the hot electron range

  • Author

    Behle, A.F. ; Zuleeg, R.

  • Author_Institution
    McDonnell Douglas Astronautics Company, Huntington Beach, Calif.
  • Volume
    19
  • Issue
    8
  • fYear
    1972
  • fDate
    8/1/1972 12:00:00 AM
  • Firstpage
    993
  • Lastpage
    995
  • Abstract
    Carrier removal and mobility degradation in epitaxially grown n-type GaAs, due to exposure to fast neutrons, is reported. The variations in carrier concentrations and mobilities are utilized to predict the transconductance degradation of GaAs JFET\´s as a function of neutron fluence. Experimental results up to a fluence of 8 \\times 10^{15} n/cm2are reported and correlated with theory.
  • Keywords
    Chromium; Degradation; Differential amplifiers; Electron mobility; Epitaxial layers; Gallium arsenide; Impedance; Neutrons; Notice of Violation; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1972.17532
  • Filename
    1477003
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1043626