DocumentCode :
1043626
Title :
Fast neutron tolerance of GaAs JFET´s operating in the hot electron range
Author :
Behle, A.F. ; Zuleeg, R.
Author_Institution :
McDonnell Douglas Astronautics Company, Huntington Beach, Calif.
Volume :
19
Issue :
8
fYear :
1972
fDate :
8/1/1972 12:00:00 AM
Firstpage :
993
Lastpage :
995
Abstract :
Carrier removal and mobility degradation in epitaxially grown n-type GaAs, due to exposure to fast neutrons, is reported. The variations in carrier concentrations and mobilities are utilized to predict the transconductance degradation of GaAs JFET\´s as a function of neutron fluence. Experimental results up to a fluence of 
n/cm2are reported and correlated with theory.
n/cm2are reported and correlated with theory.Keywords :
Chromium; Degradation; Differential amplifiers; Electron mobility; Epitaxial layers; Gallium arsenide; Impedance; Neutrons; Notice of Violation; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17532
Filename :
1477003
Link To Document :
