DocumentCode
1043759
Title
Effect of magnetic field on the performance of millimeter-wave detectors using bulk InSb
Author
Eldumiati, I.I. ; Haddad, G.I.
Author_Institution
University of Michigan, Ann Arbor, Mich.
Volume
19
Issue
9
fYear
1972
fDate
9/1/1972 12:00:00 AM
Firstpage
1061
Lastpage
1063
Abstract
The performance of microwave-biased millimeter-wave detectors using bulk InSb in the presence of a magnetic field is described. Broad-band transitions between the impurity and conduction bands together with free-carrier absorption are responsible for the detection mechanism. The performance of the device is examined as a function of the magnetic field, millimeter-wave signal, and microwave bias levels. The results show that the performance can be improved by proper choice of the magnetic field.
Keywords
Conductivity; Delay; Detectors; Electromagnetic wave absorption; Frequency; Impurities; Magnetic fields; Microwave circuits; Microwave devices; Millimeter wave circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17545
Filename
1477016
Link To Document