Title :
Effect of magnetic field on the performance of millimeter-wave detectors using bulk InSb
Author :
Eldumiati, I.I. ; Haddad, G.I.
Author_Institution :
University of Michigan, Ann Arbor, Mich.
fDate :
9/1/1972 12:00:00 AM
Abstract :
The performance of microwave-biased millimeter-wave detectors using bulk InSb in the presence of a magnetic field is described. Broad-band transitions between the impurity and conduction bands together with free-carrier absorption are responsible for the detection mechanism. The performance of the device is examined as a function of the magnetic field, millimeter-wave signal, and microwave bias levels. The results show that the performance can be improved by proper choice of the magnetic field.
Keywords :
Conductivity; Delay; Detectors; Electromagnetic wave absorption; Frequency; Impurities; Magnetic fields; Microwave circuits; Microwave devices; Millimeter wave circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17545
