Title :
Long-wavelength In0.53Ga0.47As-In0.52Al0.48As large-area avalanche photodiodes and arrays
Author :
Zheng, X.G. ; Hsu, J.S. ; Hurst, J.B. ; Li, X. ; Wang, S. ; Sun, X. ; Holmes, Archie L., Jr. ; Campbell, Joe C. ; Huntington, Andrew S. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
Large-area (500-μm diameter) mesa-structure In0.53Ga0.47As-In0.52Al0.48As avalanche photodiodes (APDs) are reported. The dark current density was ∼2.5×10-2 nA/μm2 at 90% of breakdown; low surface leakage current density (∼4.2 pA/μm) was achieved with wet chemical etching and SiO2 passivation. An 18 × 18 APD array with uniform distributions of breakdown voltage, dark current, and multiplication gain has also been demonstrated. The APDs in the array achieved 3-dB bandwidth of ∼8 GHz at low gain and a gain-bandwidth product of ∼120 GHz.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; etching; gallium arsenide; indium compounds; optical arrays; optical communication equipment; passivation; 500 mum; In0.53Ga0.47As-In0.52Al0.48As; SiO2 passivation; avalanche multiplication; avalanche photodiode arrays; dark current density; large-area avalanche photodiodes; long-wavelength avalanche photodiodes; wet chemical etching; Avalanche photodiodes; Bandwidth; Dark current; Electric breakdown; Infrared imaging; Leakage current; Optical fiber communication; Optical materials; Passivation; Sun; Avalanche multiplication; avalanche photodiodes; excess noise factor; impact ionization; ionization coefficient; photodetectors; photodiode;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.831637
