Title :
Using reverse dynamic I-V characteristics of AlGaAs/GaAs optothyristor for pulsed power-switching applications
Author :
Zhao, Jun Hua ; Burke, T. ; Larson, David ; Weiner, M. ; Chin, Alvin ; Ballingall, J.M. ; Yu, Tsung-Han
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
5/21/1992 12:00:00 AM
Abstract :
The reverse dynamic current-voltage (I-V) characteristics of a high performance MBE grown AlGaAs/GaAs based heterostructure optothyristor have been studied for high power pulsed switching applications. Switched current and dissipated energy per switching as a function of the blocking voltage are presented. Possible reverse switching mechanisms are also discussed in terms of the novel device structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; photoconducting devices; semiconductor epitaxial layers; thyristors; AlGaAs-GaAs; blocking voltage; device structure; dissipated energy per switching; heterostructure optothyristor; high power pulsed switching; optothyristor; pulsed power-switching applications; reverse characteristics; reverse dynamic I-V characteristics; reverse dynamic current-voltage; reverse switching mechanisms; semiconductors; semiinsulating blocking layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920621
