Title :
Small-signal admittance of BARITT diodes
Author :
Matsumura, Masakiyo
Author_Institution :
Nippon Electric Company, Ltd., Kawasaki, Japan
fDate :
10/1/1972 12:00:00 AM
Abstract :
Small-signal admittance and phasor diagrams for metal-semiconductor-metal microwave oscillator diodes (BARITT diodes) were calculated by taking previously neglected carrier diffusion and field dependence of carrier velocity into account. It was shown that the microwave performance greatly degrades with an increase of dc current density and of oscillation frequency.
Keywords :
Admittance; Circuits; Electrons; Frequency; Gunn devices; Logic devices; Microwave devices; Schottky diodes; Semiconductor diodes; Switches;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17561
