• DocumentCode
    1044006
  • Title

    Low dark current quasi-Schottky barrier MSM-photodiode structures on n-Ga0.47In0.53As with p+-Ga0.47In0.53As cap layer

  • Author

    Averin, S.V. ; Kohl, A. ; Muller, Rudolf ; Mesquida Kusters, A. ; Wisser, J. ; Heime, K.

  • Author_Institution
    Inst. fur Halbleitertech., RWTH Aachen, Germany
  • Volume
    28
  • Issue
    11
  • fYear
    1992
  • fDate
    5/21/1992 12:00:00 AM
  • Firstpage
    992
  • Lastpage
    995
  • Abstract
    The p+-cap layer was used to fabricate a metal-semiconductor-metal (MSM) interdigitated photodetector on Ga0.47In0.53As. The measured barrier height was Phi Bn=0.52 V, the ideality factor n=1.1 and average dark current density 2 mA/cm2. A rise time of 45 ps at lambda =1.3 mu m under 2 V bias was measured for an MSM photodiode with 3 mu m finger width and finger gaps and an active area of 100*100 mu m2.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodiodes; 1.3 micron; 100 micron; 2 V; 3 micron; 45 ps; Ga 0.47In 0.53As; MSM photodiode; Schottky barrier photodiodes; barrier height; bias; cap layer; dark current; finger gaps; finger width; ideality factor; interdigitated photodetector; metal-semiconductor-metal; rise time; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920631
  • Filename
    274681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044006