Title :
Low dark current quasi-Schottky barrier MSM-photodiode structures on n-Ga0.47In0.53As with p+-Ga0.47In0.53As cap layer
Author :
Averin, S.V. ; Kohl, A. ; Muller, Rudolf ; Mesquida Kusters, A. ; Wisser, J. ; Heime, K.
Author_Institution :
Inst. fur Halbleitertech., RWTH Aachen, Germany
fDate :
5/21/1992 12:00:00 AM
Abstract :
The p+-cap layer was used to fabricate a metal-semiconductor-metal (MSM) interdigitated photodetector on Ga0.47In0.53As. The measured barrier height was Phi Bn=0.52 V, the ideality factor n=1.1 and average dark current density 2 mA/cm2. A rise time of 45 ps at lambda =1.3 mu m under 2 V bias was measured for an MSM photodiode with 3 mu m finger width and finger gaps and an active area of 100*100 mu m2.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodiodes; 1.3 micron; 100 micron; 2 V; 3 micron; 45 ps; Ga 0.47In 0.53As; MSM photodiode; Schottky barrier photodiodes; barrier height; bias; cap layer; dark current; finger gaps; finger width; ideality factor; interdigitated photodetector; metal-semiconductor-metal; rise time; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920631
