DocumentCode :
1044069
Title :
Transistor action of metal (CoSi2)/insulator (CaF2) hot electron transistor structure
Author :
Watanabe, Manabu ; Suemasu, Takashi ; Asada, Minoru
Volume :
28
Issue :
11
fYear :
1992
fDate :
5/21/1992 12:00:00 AM
Firstpage :
1002
Lastpage :
1004
Abstract :
The first transistor action of tunnelling hot electron transistors with single-crystalline metal (CoSi2)/insulator (CaF2) has been achieved. This device consists of CoSi2/CaF2 heterojunctions grown on n-Si
Keywords :
calcium compounds; cobalt compounds; epitaxial layers; hot electron transistors; metal-insulator-metal structures; 1.9 nm; 77 K; 90 percent; CoSi 2-CaF 2; Si substrate; heterojunctions; ionised beam epitaxy; metal base layer; metal insulator HET; n-Si; silicides; single-crystalline metal; transfer efficiency; transistor action; tunnelling hot electron transistors; two step growth technique;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920637
Filename :
274687
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1044069
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