• DocumentCode
    1044069
  • Title

    Transistor action of metal (CoSi2)/insulator (CaF2) hot electron transistor structure

  • Author

    Watanabe, Manabu ; Suemasu, Takashi ; Asada, Minoru

  • Volume
    28
  • Issue
    11
  • fYear
    1992
  • fDate
    5/21/1992 12:00:00 AM
  • Firstpage
    1002
  • Lastpage
    1004
  • Abstract
    The first transistor action of tunnelling hot electron transistors with single-crystalline metal (CoSi2)/insulator (CaF2) has been achieved. This device consists of CoSi2/CaF2 heterojunctions grown on n-Si
  • Keywords
    calcium compounds; cobalt compounds; epitaxial layers; hot electron transistors; metal-insulator-metal structures; 1.9 nm; 77 K; 90 percent; CoSi 2-CaF 2; Si substrate; heterojunctions; ionised beam epitaxy; metal base layer; metal insulator HET; n-Si; silicides; single-crystalline metal; transfer efficiency; transistor action; tunnelling hot electron transistors; two step growth technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920637
  • Filename
    274687
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044069