DocumentCode :
1044082
Title :
Admittance of a forward-biased P-N+junction diode
Author :
Gokhale, B.V.
Author_Institution :
IBM East Fishkill Facility, Hopewell Junction, N. Y.
Volume :
19
Issue :
11
fYear :
1972
fDate :
11/1/1972 12:00:00 AM
Firstpage :
1215
Lastpage :
1219
Abstract :
Numerical solutions of the basic semiconductor transport equations are used to analyze the ac behavior of a forward-biased diode.
Keywords :
Admittance; Capacitance; Charge carrier processes; Equations; Frequency dependence; P-n junctions; Radiative recombination; Semiconductor diodes; Spontaneous emission; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17576
Filename :
1477047
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1044082
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