DocumentCode
1044123
Title
Room temperature operation of microdisc lasers with submilliamp threshold current
Author
Levi, A.F.J. ; Slusher, R.E. ; McCall, S.L. ; Tanbun-Ek, T. ; Coblentz, D.L. ; Pearton, S.J.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
28
Issue
11
fYear
1992
fDate
5/21/1992 12:00:00 AM
Firstpage
1010
Lastpage
1012
Abstract
Electrically pumped whispering-gallery mode microdisc lasers with singlemode operation and submilliamp threshold current at room temperature are demonstrated. The device consists of an InGaAs/InGaAsP multiple quantum well (MQW) structure formed into a 2-10 mu m diameter disc approximately 0.1 mu m thick. These microdiscs are supported on an InP pedestal.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; 0.95 mA; InGaAs-InGaAsP; InP pedestal; MQW structure; electrically pumped laser; microdisc lasers; multiple quantum well; room temperature operation; singlemode operation; submilliamp threshold current; whispering-gallery mode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920642
Filename
274692
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