Title :
Room temperature operation of microdisc lasers with submilliamp threshold current
Author :
Levi, A.F.J. ; Slusher, R.E. ; McCall, S.L. ; Tanbun-Ek, T. ; Coblentz, D.L. ; Pearton, S.J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
5/21/1992 12:00:00 AM
Abstract :
Electrically pumped whispering-gallery mode microdisc lasers with singlemode operation and submilliamp threshold current at room temperature are demonstrated. The device consists of an InGaAs/InGaAsP multiple quantum well (MQW) structure formed into a 2-10 mu m diameter disc approximately 0.1 mu m thick. These microdiscs are supported on an InP pedestal.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; 0.95 mA; InGaAs-InGaAsP; InP pedestal; MQW structure; electrically pumped laser; microdisc lasers; multiple quantum well; room temperature operation; singlemode operation; submilliamp threshold current; whispering-gallery mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920642
