• DocumentCode
    1044260
  • Title

    Effect of Zn doping on differential gain and damping of 1.55 mu m InGaAs/InGaAsP MWQ lasers

  • Author

    Lealman, I.F. ; Cooper, Diana Marina ; Perrin, S.D.

  • Author_Institution
    BT Labs., Ipswich, UK
  • Volume
    28
  • Issue
    11
  • fYear
    1992
  • fDate
    5/21/1992 12:00:00 AM
  • Firstpage
    1032
  • Lastpage
    1034
  • Abstract
    The differential gain and nonlinear damping in 16 well MQW lasers has been studied using relative intensity noise (RIN) measurements. Zinc doping the active region increases the differential gain by 50% to 10-19 m2 and reduces the nonlinear damping factor by 20% to 0.20 nS. This represents a maximum intrinsic 3 dB bandwidth of 45 GHz.
  • Keywords
    III-V semiconductors; damping; electron device noise; gallium arsenide; gallium compounds; indium compounds; semiconductor doping; semiconductor junction lasers; 1.55 micron; 45 GHz; InGaAs-InGaAsP:Zn; InP substrate; MWQ lasers; active region doping; differential gain; maximum intrinsic 3 dB bandwidth; nonlinear damping; relative intensity noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920655
  • Filename
    274706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044260