DocumentCode :
1044260
Title :
Effect of Zn doping on differential gain and damping of 1.55 mu m InGaAs/InGaAsP MWQ lasers
Author :
Lealman, I.F. ; Cooper, Diana Marina ; Perrin, S.D.
Author_Institution :
BT Labs., Ipswich, UK
Volume :
28
Issue :
11
fYear :
1992
fDate :
5/21/1992 12:00:00 AM
Firstpage :
1032
Lastpage :
1034
Abstract :
The differential gain and nonlinear damping in 16 well MQW lasers has been studied using relative intensity noise (RIN) measurements. Zinc doping the active region increases the differential gain by 50% to 10-19 m2 and reduces the nonlinear damping factor by 20% to 0.20 nS. This represents a maximum intrinsic 3 dB bandwidth of 45 GHz.
Keywords :
III-V semiconductors; damping; electron device noise; gallium arsenide; gallium compounds; indium compounds; semiconductor doping; semiconductor junction lasers; 1.55 micron; 45 GHz; InGaAs-InGaAsP:Zn; InP substrate; MWQ lasers; active region doping; differential gain; maximum intrinsic 3 dB bandwidth; nonlinear damping; relative intensity noise;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920655
Filename :
274706
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1044260
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