DocumentCode
1044326
Title
High-efficiency ultra-wideband power amplifier in GaN technology
Author
Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Piazzon, L.
Author_Institution
Univ. of Roma Tor Vergata, Rome
Volume
44
Issue
2
fYear
2008
Firstpage
130
Lastpage
131
Abstract
The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology are presented. The active device is a HEMT with 1 mm of gate periphery. The realised PA operates from 0.8 to 4 GHz, showing a drain efficiency greater than 40% with an output power higher than 32 dBm in the overall bandwidth.
Keywords
III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; HEMT; frequency 0.8 GHz to 4 GHz; gate periphery; high-efficiency ultra-wideband power amplifier; size 1 mm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20083067
Filename
4436157
Link To Document