DocumentCode :
1044562
Title :
Delay time measurement in transition metal oxide glass devices
Author :
Regan, Martin ; Drake, Cyril F.
Author_Institution :
Standard Telecommunication Laboratories, Ltd., Harlow, Essex, England
Volume :
20
Issue :
2
fYear :
1973
fDate :
2/1/1973 12:00:00 AM
Firstpage :
144
Lastpage :
149
Abstract :
The switching delay times for transition metal oxide glass devices vary from operation to operation. However, a statistical treatment of delay time measurements has revealed the voltage dependence of the delay times and the existence of a well-defined threshold voltage for all of the devices tested. The effect of the switch-OFF history on the performance of the devices has also been investigated. Measurements of the transition metal oxide devices are compared with similar work on chalcogenide devices.
Keywords :
Circuits; Copper; Delay effects; Glass; History; Switches; Testing; Thin film devices; Threshold voltage; Time measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17621
Filename :
1477278
Link To Document :
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