• DocumentCode
    1044649
  • Title

    Visible (660 nm) resonant cavity light-emitting diodes

  • Author

    Lott, James A. ; Schneider, R.P. ; Vawter, G. Allen ; Zolper, J.C. ; Malloy, K.J.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    29
  • Issue
    4
  • fYear
    1993
  • Firstpage
    328
  • Lastpage
    329
  • Abstract
    The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP strained quantum well active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Linewidths from 0.9 mm (2.6 meV) to 45 nm (12.8 meV) were obtained by varying the cavity factor (Q).
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; 660 nm; III-V semiconductors; InAlGaP-AlAs-AlGaAs; RCLEDs; cavity factor; distributed Bragg reflectors; linewidths; resonant cavity light-emitting diodes; strained quantum well active region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930222
  • Filename
    274767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044649