Title :
Threshold reduction of 1.3 mu m GaInAsP/InP surface emitting laser by a maskless circular planar buried heterostructure regrowth
Author :
Baba, Toshihiko ; Suzuki, Kenji ; Yogo, Y. ; Iga, Kenichi ; Koyama, Fumio
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan
Abstract :
A newly introduced maskless planar buried heterostructure regrowth has substantially improved the regrown heterointerface of a 1.3 mu m GaInAsP/InP circular buried heterostructure surface emitting laser. The threshold current of the 12 mu m phi device was reduced to 2.2 mA at 77 K under CW conditions.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 1.3 micron; 2.2 mA; 77 K; CW conditions; GaInAsP-InP; heterostructure regrowth; maskless circular planar buried heterostructure; regrown heterointerface; surface emitting laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930224
