DocumentCode
1044739
Title
Switching mechanism in thin-oxide MNOS devices
Author
Gordon, Neil ; Johnson, Walter C.
Author_Institution
Princeton University, Princeton, N. J.
Volume
20
Issue
3
fYear
1973
fDate
3/1/1973 12:00:00 AM
Firstpage
253
Lastpage
256
Abstract
The results of pulsed switching experiments and the dc 
characteristics of thin-oxide (∼20 Å) MNOS devices indicate that the dominant switching mechanism is not necessarily the direct tunneling of electrons to and from states at or near the oxide-nitride interface. Instead, it appears that switching may actually be the result of the tunneling of electrons (holes) from the silicon conduction (valence) band into the nitride conduction (valence) band, with subsequent trapping in the nitride.
characteristics of thin-oxide (∼20 Å) MNOS devices indicate that the dominant switching mechanism is not necessarily the direct tunneling of electrons to and from states at or near the oxide-nitride interface. Instead, it appears that switching may actually be the result of the tunneling of electrons (holes) from the silicon conduction (valence) band into the nitride conduction (valence) band, with subsequent trapping in the nitride.Keywords
Capacitance; Capacitance-voltage characteristics; Charge carrier processes; Electron emission; Electron traps; Semiconductor device modeling; Silicon; Steady-state; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17637
Filename
1477294
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