DocumentCode :
1044739
Title :
Switching mechanism in thin-oxide MNOS devices
Author :
Gordon, Neil ; Johnson, Walter C.
Author_Institution :
Princeton University, Princeton, N. J.
Volume :
20
Issue :
3
fYear :
1973
fDate :
3/1/1973 12:00:00 AM
Firstpage :
253
Lastpage :
256
Abstract :
The results of pulsed switching experiments and the dc 
characteristics of thin-oxide (∼20 Å) MNOS devices indicate that the dominant switching mechanism is not necessarily the direct tunneling of electrons to and from states at or near the oxide-nitride interface. Instead, it appears that switching may actually be the result of the tunneling of electrons (holes) from the silicon conduction (valence) band into the nitride conduction (valence) band, with subsequent trapping in the nitride.
characteristics of thin-oxide (∼20 Å) MNOS devices indicate that the dominant switching mechanism is not necessarily the direct tunneling of electrons to and from states at or near the oxide-nitride interface. Instead, it appears that switching may actually be the result of the tunneling of electrons (holes) from the silicon conduction (valence) band into the nitride conduction (valence) band, with subsequent trapping in the nitride.Keywords :
Capacitance; Capacitance-voltage characteristics; Charge carrier processes; Electron emission; Electron traps; Semiconductor device modeling; Silicon; Steady-state; Tunneling; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17637
Filename :
1477294
Link To Document :
