Title :
Highly reliable 200 mW AlGaAs laser diode with fundamental transverse mode
Author :
Tajiri, A. ; Minakuchi, K. ; Komeda, K. ; Bessho, Y. ; Inoue, Yasuyuki ; Yodoshi, K. ; Yamaguchi, Toru
Author_Institution :
Semicond. Res. Centre, Sanyo Electr. Co. Ltd., Osaka, Japan
Abstract :
A highly reliable 200 mW AlGaAs laser diode with a fundamental transverse mode has been developed, by optimising its structure with a 0.8 mu m thick p-cladding layer, a 1200 mu m long cavity length, and a front facet coating with a low reflectivity of 2%. The maximum output power was 500 mW, and stable fundamental transverse mode operation was obtained up to 350 mW. Stable operation under 200 mW and 50 degrees C was confirmed for more than 1200 h. Optical feedback noise was below 3*10-14 Hz-1.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; reliability; semiconductor lasers; 1200 h; 1200 micron; 200 to 500 mW; 50 degC; AlGaAs laser diode; cavity length; front facet coating; fundamental transverse mode; p-cladding layer; reliable device; semiconductor lasers; stable operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930248
