1000 W QCW output power from surface emitting GaAs/AlGaAs laser diode arrays

For the first time, quasicontinuous-wave (QCW) output power levels of 1000 W for monolithic surface emitting laser diodes (M-SELDs) are reported. To realise the basic structure of the laser diodes, an original 2-D structure was developed where the epitaxial structure is made on engraved GaAs substrate and the laser facets are made by a microcleaving technique. With a compact planar association of 10 M-SELDs of 0.1 cm² which emits 100 W QCW each (optical power density=1 kW/cm²) on the same submount, a power source of 1000 W QCW has been obtained. The operating current is 150 A, the slope efficiency is 7.5 W/A and the optical divergence of the beam is lower than 20 degrees FWHM in the perpendicular direction.