DocumentCode :
1044798
Title :
35 GHz fmax InP JFET grown by non-hydride MOCVD
Author :
Hashemi, Mahmood ; Shealy, James B. ; DenBaars, Steven P. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
29
Issue :
4
fYear :
1993
Firstpage :
372
Lastpage :
373
Abstract :
High performance InP JFETs were fabricated for the first time by MOCVD using tertiary-butyl phosphine (TBP) as the alternative for the phosphine source. Devices within a gate length of 1 mu m showed very high transconductance of 130 mS/mm, gate-drain breakdown voltage exceeding 20 V, current density of >450 mA/mm with record high fT and fmax of 15 and 35 GHz, respectively.
Keywords :
III-V semiconductors; indium compounds; junction gate field effect transistors; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 1 micron; 130 mS; 15 GHz; 20 V; 35 GHz; InP; JFET; MOCVD; TBP; fabrication; nonhydride metal-organic CVD; tertiary-butyl phosphine;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930250
Filename :
274782
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1044798
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