DocumentCode
1044825
Title
An ion-implanted Schottky-barrier gate field-effect transistor
Author
Moline, R.A. ; Gibson, Willard C. ; Heck, L.D. ; Heck, Lyle D.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume
20
Issue
3
fYear
1973
fDate
3/1/1973 12:00:00 AM
Firstpage
317
Lastpage
320
Abstract
Techniques of fabricating an n-channel silicon field-effect transistor using phosphorus ion implantation and a platinum silicide Schottky-barrier gate (SB-FET) have been developed. The platinum silicide Schottky-barrier top gate is part of the contact metallization process. The phosphorus-doped channel is obtained by using a 50-keV ion-implanted predeposition and an 1100°C drive-in. A range of implantation doses and drive-in times were used to achieve various SB-FET characteristics. A threshold/pinchoff voltage range of +0.4 to -7.5 V has been obtained with typical spreads of approximately 0.1 V across the slice. A positive threshold voltage represents a SB-FET that is normally off and is turned on by a forward-biased gate. Results have been obtained for
Keywords
FETs; Fabrication; Impurities; Ion implantation; Platinum; Schottky barriers; Silicides; Silicon; Testing; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17645
Filename
1477302
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