DocumentCode :
1044836
Title :
3.1*105 cm2/Vs peak electron mobilities in InP grown by chemical beam epitaxy
Author :
Sudersena Rao, T. ; Lacelle, C. ; Roth, A.P.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Volume :
29
Issue :
4
fYear :
1993
Firstpage :
373
Lastpage :
375
Abstract :
Chemical beam epitaxy (CBE) growth of very high purity InP with Hall mobility as high as 238000 cm2/V s at 77 K and with a peak value of 311000 cm2/V s at 50 K and residual impurity concentration of 6*1013 cm-3 at 77 K is reported for an InP layer grown at 500 degrees C. These values are the highest mobility values are reported for InP grown by any molecular beam method.
Keywords :
Hall effect; III-V semiconductors; carrier density; carrier mobility; chemical beam epitaxial growth; electrical conductivity of crystalline semiconductors and insulators; indium compounds; semiconductor growth; 50 to 77 K; 500 degC; CBE growth; Hall mobility; InP; chemical beam epitaxy; impurity concentration; peak electron mobilities; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930251
Filename :
274785
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1044836
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