• DocumentCode
    1044836
  • Title

    3.1*105 cm2/Vs peak electron mobilities in InP grown by chemical beam epitaxy

  • Author

    Sudersena Rao, T. ; Lacelle, C. ; Roth, A.P.

  • Author_Institution
    Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
  • Volume
    29
  • Issue
    4
  • fYear
    1993
  • Firstpage
    373
  • Lastpage
    375
  • Abstract
    Chemical beam epitaxy (CBE) growth of very high purity InP with Hall mobility as high as 238000 cm2/V s at 77 K and with a peak value of 311000 cm2/V s at 50 K and residual impurity concentration of 6*1013 cm-3 at 77 K is reported for an InP layer grown at 500 degrees C. These values are the highest mobility values are reported for InP grown by any molecular beam method.
  • Keywords
    Hall effect; III-V semiconductors; carrier density; carrier mobility; chemical beam epitaxial growth; electrical conductivity of crystalline semiconductors and insulators; indium compounds; semiconductor growth; 50 to 77 K; 500 degC; CBE growth; Hall mobility; InP; chemical beam epitaxy; impurity concentration; peak electron mobilities; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930251
  • Filename
    274785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044836