Title :
Characterisation and application of BPR-100 thick photoresist
Author :
Basak, N. ; Harris, G.L. ; Griffin, J. ; Wise, K.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Howard Univ., Washington, DC
fDate :
12/1/2007 12:00:00 AM
Abstract :
BPR-100 thick photoresist was characterised by spin speed, exposure time, ultra-violet light (UV) absorption, development time and reactive ion etching (RIE) rates. This photoresist has been found to be highly stable in chemical baths and as a mask for RIE. The thickness of the resist varies with spin speed from 15 to 90 mum with a single spin. Optical and scanning electron microscopy images show vertical sidewalls and crack-free resist surfaces with a production-type reproducibility. An aspect ratio of 3:1 was achieved under optimum conditions.
Keywords :
optical microscopy; photoresists; scanning electron microscopy; sputter etching; BPR-100; optical microscopy; reactive ion etching; scanning electron microscopy; thick photoresist; ultra-violet light absorption;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl:20070061
