Title :
Subsurface breakdown device reliability
Author_Institution :
INTEL Corporation, Santa Clara, Calif.
fDate :
3/1/1973 12:00:00 AM
Abstract :
New data from special bipolar junctions that breakdown below the Si-SiO2interface are described. The devices were broken down both in a dc and pulse fashion, and junction degradation in the form of increased reverse leakage and reduced minority carrier lifetime was investigated. No degradation was observed.
Keywords :
Circuits; Degradation; Diodes; Electric breakdown; Enterprise resource planning; Equations; P-n junctions; Resistors; Tellurium; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17648
