New functional field-effect transistor based on wavefunction modulation in delta -doped double quantum wells

Novel field-effect transistor characteristics are demonstrated by using impurity-inserted double quantum wells. By controlling the resonant coupling with gate voltage, electron wavefunctions are delocalised or localised, resulting in the enhancement or suppression of ionised impurity scattering. Multifunctional performance including a large negative transconductance and frequency-multiplier action is realised.