• DocumentCode
    1044909
  • Title

    Single-electron memory

  • Author

    Nakazato, Kazuo ; Blaikie, R.J. ; Cleaver, J.R.A. ; Ahmed, Hameeza

  • Author_Institution
    Cambridge Lab., Hitachi Europe Ltd., UK
  • Volume
    29
  • Issue
    4
  • fYear
    1993
  • Firstpage
    384
  • Lastpage
    385
  • Abstract
    A single-electron memory cell, in which one bit of information is represented by +n and -n electron number states, is described. An experimental memory circuit for n approximately=100 was fabricated and the basic operation was confirmed at a temperature of 30 mK. This structure can be modified to operate with n=1.
  • Keywords
    integrated memory circuits; semiconductor storage; tunnelling; 30 mK; Coulomb blockage effect; GaAs; delta-doped layer; electron number states; gate capacitor; low temperature operation; memory circuit; multiple tunnel junction; side-gated structures; single-electron memory cell;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930258
  • Filename
    274792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1044909