DocumentCode :
1044973
Title :
Coupling Effect of On-Chip Inductor With Variable Metal Width
Author :
Hsu, Heng-Ming ; Chang, Jen-Zien ; Chien, Hung-Chi
Author_Institution :
Nat. Chung-Hsing Univ., Taichung
Volume :
17
Issue :
7
fYear :
2007
fDate :
7/1/2007 12:00:00 AM
Firstpage :
498
Lastpage :
500
Abstract :
This study proposes a proper layout of on-chip inductors to diminish the coupling effect in silicon-based technology. Keeping self inductance constant, the mutual inductance is measured to characterize coupling effect in three test keys. A layout with variable metal width of inductor is found to alleviate mutual inductance. Experiment results demonstrate the mutual inductance decreases 33.5% compared with standard layout. This information will be helpful in implementation of more than one inductor into radio frequency integrated circuits (RFICs).
Keywords :
inductance; inductors; joining processes; radiofrequency integrated circuits; silicon; RFICs; coupling effect; mutual inductance; on-chip inductor; radio frequency integrated circuits; self inductance; silicon-based technology; variable metal width; Automatic testing; Coupling circuits; Inductance; Inductors; Integrated circuit technology; Low-noise amplifiers; Magnetic fields; Magnetic noise; Radiofrequency integrated circuits; Silicon; Coupling; inductor; integrated circuits (ICs); planar inductor;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2007.899306
Filename :
4266839
Link To Document :
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