An Extension of the Classical Method to Design High Efficiency Microwave Class E PAs

Author

Loo-Yau, J.R. ; Ascencio-Ramirez, H. ; Reynoso-Hernández, J.A.

Author_Institution

Centro de Investigacion y Estudios Avanzados del I.P.N unidad, Guadalajara

Volume

17

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

540

Lastpage

542

Abstract

This letter presents an extension of the analytical method proposed in (Mader and Popovic, 1995) to determine the impedance of the load network of a class E power amplifier (PA). The extended method lies in a new analytical expression for calculating the output load network, which allows for the parasitic elements and the time that the input signal takes for saturating the field effect transistor (FET). To demonstrate the usefulness of the extended method, two class E PA at 6 GHz, 4 V were designed and compared. One of them was designed using the classical method, while the second was designed using the extended method. Both amplifiers were fabricated on a Duroid substrate and the transistor used was a GaAs FET FLK057WG. The amplifier, designed with the extended method, exhibits an improvement on the power added efficiency of 18.6% in comparison with the amplifier designed using the classical theory.

Keywords

III-V semiconductors; field effect transistor circuits; microwave amplifiers; power amplifiers; wide band gap semiconductors; Duroid substrate; FLK057WG; GaAs - Interface; field effect transistor; frequency 6 GHz; microwave class E power amplifier; output load network; parasitic element; voltage 4 V; Design methodology; FETs; Frequency; Gallium arsenide; High power amplifiers; Microwave theory and techniques; Microwave transistors; Power amplifiers; Switches; Zero voltage switching; Class E power amplifier (PA); high efficiency PA;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.899322

Filename

4266846