• DocumentCode
    1045078
  • Title

    Direct measurement of hot hole distribution in an SiGe unipolar transistor structure

  • Author

    Liu, H.C. ; Li, Jie ; Buchanan, M. ; Baribeau, J.-M. ; Simmons, Jay G.

  • Author_Institution
    Inst. for Microstructural Sci., Nat. Res. Council, Ottawa, Ont., Canada
  • Volume
    29
  • Issue
    4
  • fYear
    1993
  • Firstpage
    407
  • Lastpage
    409
  • Abstract
    A novel SiGe hot hole transistor structure is fabricated and used to study the hot hole distribution in the thin base created by current injection. A hot carrier spectroscopy technique is employed, and hot hole distributions are directly measured.
  • Keywords
    Ge-Si alloys; bipolar transistors; hot carriers; semiconductor device testing; semiconductor materials; SiGe; current injection; hot carrier spectroscopy technique; hot hole distribution; hot hole transistor; thin base; unipolar transistor structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930273
  • Filename
    274808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045078