Title :
Direct measurement of hot hole distribution in an SiGe unipolar transistor structure
Author :
Liu, H.C. ; Li, Jie ; Buchanan, M. ; Baribeau, J.-M. ; Simmons, Jay G.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council, Ottawa, Ont., Canada
Abstract :
A novel SiGe hot hole transistor structure is fabricated and used to study the hot hole distribution in the thin base created by current injection. A hot carrier spectroscopy technique is employed, and hot hole distributions are directly measured.
Keywords :
Ge-Si alloys; bipolar transistors; hot carriers; semiconductor device testing; semiconductor materials; SiGe; current injection; hot carrier spectroscopy technique; hot hole distribution; hot hole transistor; thin base; unipolar transistor structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930273
