• DocumentCode
    1045103
  • Title

    Effects of lateral surface generation on the MOS-C linear-sweep and C-t transient characteristics

  • Author

    Pierret, R.F. ; Small, D.W.

  • Author_Institution
    Purdue University, West Lafayette, Ind.
  • Volume
    20
  • Issue
    4
  • fYear
    1973
  • fDate
    4/1/1973 12:00:00 AM
  • Firstpage
    457
  • Lastpage
    458
  • Abstract
    Observed effects of lateral surface generation on the MOS-C C-t transient and linear-sweep C-VGcharacteristics are noted and explained in terms of a qualitative model that emphasizes the heretofore ignored role of outer oxide surface ions. It is suggested that the lateral generation component is functionally more complex than previously conceived, and that this fact can lead to erroneous conclusions in the interpretation of deep depletion data.
  • Keywords
    Atmosphere; Capacitance measurement; Character generation; Charge carrier lifetime; Electrostatics; MOS capacitors; Nitrogen; Production; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17670
  • Filename
    1477327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045103