A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application

Author

Wu, Dake ; Huang, Ru ; Wong, Waisum ; Wang, Yangyuan

Author_Institution

Peking Univ., Beijing

Volume

17

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

543

Lastpage

545

Abstract

A fully integrated low noise amplifier (LNA) suitable for ultra low voltage and ultra low power applications is proposed and demonstrated in 0.13 mum CMOS technology. In order to meet the requirement of ultra low voltage applications, a two-stage common-source configuration is employed. By using forward-body-biased metal oxide semiconductor field effect transistors, the proposed LNA can operate at 0.4 V supply voltage, successfully demonstrating the application potential of dynamic threshold voltage technology in the radio frequency region. The experimental results show that the proposed LNA has a 10.3 dB power gain and a 5.3 dB noise figure, while consuming only 1.03 mW dc power with an ultra low supply voltage of 0.4 V.

Keywords

CMOS integrated circuits; MOSFET circuits; low noise amplifiers; CMOS technology; dynamic threshold voltage; forward body bias technology; frequency 5 GHz; gain 10.3 dB; low noise amplifier; metal oxide semiconductor field effect transistors; noise figure 5.3 dB; power 1.03 mW; voltage 0.4 V; CMOS technology; FETs; Low voltage; Low-noise amplifiers; Noise figure; Radio frequency; Semiconductor device noise; Stacking; Threshold voltage; Topology; Forward body bias; low noise amplifier (LNA); low power; low voltage;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.899323

Filename

4266854