Title :
91 GHz SiGe HBTs grown by MBE
Author :
Gruhle, A. ; Kibbel, H.
Author_Institution :
Daimler-Benz AG, Res. Centre Ulm, Germany
Abstract :
Si-SiGe heterojunction bipolar transistors (HBTs) have been fabricated with their complete layer structure grown by MBE without interruption. The maximum measured transit frequency fT was 91 GHz and fmax reached 65 GHz. These are the fastest silicon transistors reported to date in terms of both fT and fmax figures.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor growth; semiconductor materials; silicon; solid-state microwave devices; 65 GHz; 91 GHz; EHF; HBTs; MBE; MW-Wake operation; Si-SiGe; heterojunction bipolar transistors; millimetre wave range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930278
