Title :
Logarithmic time dependence of pMOSFET degradation observed from gate capacitance
Author :
Ling, C.H. ; Yeow, Y.T. ; Ah, L.K.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Hot-carrier degradation in pMOSFETs is observed from an increase in gate overlap capacitance due to trapped electrons in the gate oxide inverting a portion of the channel near the stressed junction. The logarithmic time growth of the overlap capacitance, and hence of the trapped charge, is reported.
Keywords :
capacitance; electron traps; hot carriers; insulated gate field effect transistors; PMOS devices; gate overlap capacitance; gate oxide; hot carrier degradation; logarithmic time growth; p-channel device; pMOSFET degradation; time dependence; trapped charge; trapped electrons;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930280
