DocumentCode
1045165
Title
MOS field threshold increase by phosphorus-implanted field
Author
Sansbury, James D.
Author_Institution
Fairchild Camera and Instrument Corporation, Mountain View, Calif.
Volume
20
Issue
5
fYear
1973
fDate
5/1/1973 12:00:00 AM
Firstpage
473
Lastpage
476
Abstract
The threshold voltage of the field regions of p-channel Si gate devices can be controllably increased by phosphorus ion implantation prior to field oxidation without any additional masking step. For a 1.25-µ field oxide thickness, an increase of more than 20 V in intermediate field threshold can be achieved without lowering junction breakdown voltage.
Keywords
Boron; Breakdown voltage; Doping; Electric breakdown; Implants; Ion implantation; MOS devices; Oxidation; Threshold voltage; Voltage control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17676
Filename
1477333
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