Title :
Approximation to impurity atom distribution from a two-step diffusion process
Author :
Bhattacharyya, A.B. ; Basavaraj, T.N.
Author_Institution :
Indian Institute of Technology, New Delhi, India
fDate :
5/1/1973 12:00:00 AM
Abstract :
The most commonly used diffusion process in planar technology is known as two-step diffusion, and the impurity atom profile is given by an integral. An approximation is suggested for such a profile which is simpler and accurate enough to be used in device characterization. It is seen that the built-in field resulting from two-step diffusion can be approximated as linearly varying with distance.
Keywords :
Diffusion processes; Fabrication; Function approximation; Gaussian approximation; Linear approximation; Performance analysis; Physics; Semiconductor devices; Semiconductor impurities;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17684
