Title :
AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers
Author :
Larson, Lawrence E. ; Matloubian, M.M. ; Brown, J.J. ; Brown, A.S. ; Rhodes, R. ; Thompson, Mark
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fDate :
7/22/1993 12:00:00 AM
Abstract :
High power-added efficiency microwave power amplifier results are reported for AlInAs/GaInAs on InP HEMTs operated at relatively low power supply voltages (2.5-3 V). C-band power amplifiers are reported with power-added efficiencies as high as 67%, and output powers between 200 and 300 mW. This excellent performance at low power supply voltages is attributed to the high gain and low access resistances of the devices, which leads to a high drain efficiency despite the low power supply voltage.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; solid-state microwave circuits; solid-state microwave devices; 2.5 to 3 V; 200 to 300 mW; 67 percent; AlInAs-GaInAs-InP; C-band; HEMTs; InP; LV operation; high power-added efficiency; low power supply voltage operation; microwave amplifiers; power amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930888
