Title :
Remarks of an Extensive Investigation on the Microwave HEMT Behavior Under Illumination
Author :
Caddemi, Alina ; Crupi, Giovanni ; Fazio, E. ; Patane, S. ; Salvo, Giuseppe
Author_Institution :
DICIEAMA, Univ. of Messina, Messina, Italy
Abstract :
This letter presents valuable remarks based on an extensive experimental study of the microwave behavior for a GaAs HEMT under CW infrared and visible laser exposure. The comparison of both dc and microwave (scattering and noise) parameters with and without illumination has highlighted that the device behavior is significantly affected by the light exposure. The observed optical effects can be ascribed to the threshold voltage shift originating from the internal photovoltaic effect. The light sensitivity has shown to be more pronounced at shorter wavelength.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; laser beam effects; lighting; microwave field effect transistors; radiation hardening (electronics); CW infrared laser exposure; GaAs; GaAs HEMT; Illumination; dc parameters; internal photovoltaic effect; light exposure; light sensitivity; microwave HEMT behavior; microwave noise; microwave scattering; optical effects; threshold voltage shift; visible laser exposure; Gallium arsenide; HEMTs; Lighting; Logic gates; Masers; Microwave transistors; Noise; HEMT; microwave measurements; optical effects; radiation wavelength; threshold voltage shift;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2290220
