DocumentCode :
1045310
Title :
A study of millimeter-wave GaAs IMPATT oscillator and amplifier noise
Author :
Weller, K.P.
Author_Institution :
RCA Laboratories, Princeton, N. J.
Volume :
20
Issue :
6
fYear :
1973
fDate :
6/1/1973 12:00:00 AM
Firstpage :
517
Lastpage :
521
Abstract :
Noise characterization of a set of epitaxially grown p-n-junction GaAs IMPATTS that operate efficiently from 26-35 GHz is reported. In oscillator operation, the diodes exhibit an excess noise near the carrier, which follows a 1/ 
dependence. Far from the carrier an AM DSB SNR of 134 dB in a 100-Hz window and an FM noise measure of 36 dB are observed. As a reflection amplifier, a gain of 22 dB with a 250-MHz bandwidth and a noise figure of 25.5 dB is achieved. Under higher gain conditions (28-dB gain) a 24-dB figure is obtained.
dependence. Far from the carrier an AM DSB SNR of 134 dB in a 100-Hz window and an FM noise measure of 36 dB are observed. As a reflection amplifier, a gain of 22 dB with a 250-MHz bandwidth and a noise figure of 25.5 dB is achieved. Under higher gain conditions (28-dB gain) a 24-dB figure is obtained.Keywords :
Acoustic reflection; Circuit noise; Diodes; Energy measurement; Frequency measurement; Gallium arsenide; Noise figure; Noise measurement; Oscillators; Signal to noise ratio;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17691
Filename :
1477348
Link To Document :
