DocumentCode
1045338
Title
New SET Characterization Technique Using SPICE for Fully Depleted CMOS/SOI Digital Circuitry
Author
Makihara, A. ; Ebihara, T. ; Yokose, T. ; Tsuchiya, Y. ; Amano, Y. ; Shindou, H. ; Imagawa, R. ; Takahashi, Y. ; Kuboyama, S.
Author_Institution
High-Reliability Eng. & Components Corp., Tsukuba
Volume
55
Issue
6
fYear
2008
Firstpage
2921
Lastpage
2927
Abstract
The new SET characterization technique for 0.15 mum Fully Depleted CMOS/SOI digital circuitries was investigated using SPICE and TCAD simulations. The SPICE simulation with a switch can readily reproduce the corresponding SET voltage response for a certain LET. This technique is valid as an alternative in all load and complementary transistor conditions, irrespective of the presence of a plateau region in the SET current waveform generated in a struck transistor.
Keywords
CMOS digital integrated circuits; silicon-on-insulator; LET; SET characterization technique; SOI digital circuitry; SPICE simulations; TCAD simulations; full depleted CMOS digital circuitry; singleevent transients; CMOS digital integrated circuits; CMOS logic circuits; Circuit simulation; Isolation technology; Logic devices; Pulse circuits; Pulse generation; SPICE; Switches; Voltage; Commercial process; SET; SEU; fully depleted CMOS/SOI; hardness-by-design;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2008.2007723
Filename
4723724
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