Title :
Sensitivity of 0.1 mu m MOSFETs to manufacturing fluctuations
Author :
Sitte, R. ; Dimitrijev, Sima ; Harrison, H.B.
Author_Institution :
Griffith Univ., Nathan, Qld., Australia
fDate :
7/22/1993 12:00:00 AM
Abstract :
A sensitivity analysis of 0.1 mu m MOSFETs to manufacturing fluctuations has been carried out. The analysis reveals that the electrical parameter sensitivity in deep submicrometre devices differs from the currently produced micrometre size devices, making a revision of the validity of conventional semiconductor manufacturing heuristics for future technology mandatory.
Keywords :
insulated gate field effect transistors; semiconductor device manufacture; sensitivity analysis; 0.1 micron; MOSFETs; deep submicrometre devices; electrical parameter sensitivity; manufacturing fluctuations; semiconductor manufacturing heuristics; sensitivity analysis; submicron devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930901
