Title :
´High frequency´ quasiplanar GaInP/GaAs HBT with CBE selective collector contact regrowth
Author :
Zerguine, D. ; Launay, P. ; Alexandre, F. ; Benchimol, J.L. ; Etrillard, J.
Author_Institution :
CNET, Bagneux, France
fDate :
7/22/1993 12:00:00 AM
Abstract :
Quasiplanar GaInP/GaAs heterojunction bipolar transistors (HBTs) with selective regrowth of the collector contact are reported. Such devices have a planar surface topology which should allow large scale integration. The multilayer HBT structure and the selective regrown collector contact are realised by chemical beam epitaxy (CBE). Cutoff frequency and maximum oscillation frequency of 30 and 25 GHz respectively, have been obtained for devices with 2*15 mu m2 emitter-base junction area.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; solid-state microwave devices; 25 GHz; 30 GHz; CBE selective collector contact regrowth; GaInP-GaAs; chemical beam epitaxy; heterojunction bipolar transistors; large scale integration; maximum oscillation frequency; multilayer HBT structure; planar surface topology; quasiplanar HBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930904
